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1. general description the nts0104-q100 is a 4-bit, dual supply translating transceiver with auto direction sensing, that enables bidirectional voltage level translation. it features two 4-bit input-output ports (an and bn), one output enable input (oe) and two supply pins (v cc(a) and v cc(b) ). v cc(a) can be supplied with any voltage between 1.65 v and 3.6 v. v cc(b) can be supplied with any voltage between 2.3 v and 5.5 v. the range in supply voltages makes the device suitable for translating between any of the voltage nodes (1.8 v, 2.5 v, 3.3 v and 5.0 v). pins an and oe are referenced to v cc(a) and pins bn are referenced to v cc(b) . a low level at pin oe causes the outputs to assume a high-impedance off-state. this device is fully specified for partial power-down applications using i off . the i off circuitry disables the output, preventin g the damaging backflow current through the device when it is powered down. this product has been qualified to the automotive electronics council (aec) standard q100 (grade 1) and is suitable for use in automotive applications. 2. features and benefits ? automotive product qualif ication in accordance with aec-q100 (grade 1) ? specified from ? 40 ? c to +85 ? c and from ? 40 ? c to +125 ? c ? wide supply voltage range: ? v cc(a) : 1.65 v to 3.6 v and v cc(b) : 2.3 v to 5.5 v ? maximum data rates: ? push-pull: 50 mbps ? i off circuitry provides partial power-down mode operation ? inputs accept voltages up to 5.5 v ? esd protection: ? mil-std-883, method 3015 class 2 exceeds 2500 v for a port ? mil-std-883, method 3015 class 3b exceeds 15000 v for b port ? hbm jesd22-a114e class 2 exceeds 2500 v for a port ? hbm jesd22-a114e class 3b exceeds 15000 v for b port ? mm jesd22-a115-a exceeds 200 v (c = 200 pf, r = 0 ? ) ? latch-up performance exceeds 100 ma per jesd 78b class ii ? multiple package options nts0104-q100 dual supply translating tr ansceiver; open drain; auto direction sensing rev. 3 ? 7 august 2012 product data sheet
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 2 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing 3. applications ? i 2 c/smbus ? uart ? gpio 4. ordering information 5. marking table 1. ordering information type number package temperature range name description version NTS0104UK-Q100 ? 40 ? c to +125 ? c wlcsp12 wafer level chip scale package; 12 balls; 1.2 ? 1.6 ? 0.56 mm NTS0104UK-Q100 table 2. marking type number marking code NTS0104UK-Q100 s04
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 3 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing 6. functional diagram fig 1. logic symbol 001aan110 a1 a2 a3 a4 b1 b2 b3 b4 oe v cc(a) v cc(b) gate bias gate bias gate bias gate bias
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 4 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing 7. pinning information 7.1 pinning 7.2 pin description 8. functional description [1] h = high voltage level; l = low voltage level; x = don?t care; z = high-impedance off-state. [2] when either v cc(a) or v cc(b) is at gnd level, the device goes into power-down mode. fig 2. pin configuration wlcsp12 package fig 3. ball mapping for wlcsp12 12 3 a b c d nts0104-q100 ball a1 index area aaa-003589 transparent top view b1 a1 b2 b3 b4 v cc(b) v cc(a) oe gnd a2 a3 a4 12 3 a b c d nts0104-q100 aaa-003590 transparent top view table 3. pin description symbol ball description v cc(a) b2 supply voltage a a1, a2, a3, a4 a3, b3, c3, d3 data input or output (referenced to v cc(a) ) n.c. - not connected gnd d2 ground (0 v) oe c2 output enable input (active high; referenced to v cc(a) ) b4, b3, b2, b1 d1, c1, b1, a1 data input or output (referenced to v cc(b) ) v cc(b) a2 supply voltage b table 4. function table [1] supply voltage input input/output v cc(a) v cc(b) oe an bn 1.65 v to v cc(b) 2.3 v to 5.5 v l z z 1.65 v to v cc(b) 2.3 v to 5.5 v h input or output output or input gnd [2] gnd [2] xzz
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 5 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing 9. limiting values [1] the minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed. [2] v cco is the supply voltage associated with the output. 10. recommended operating conditions [1] hold the a and b sides of an unused i/o pair in the same state, either both at v cci or both at gnd. [2] v cc(a) must be less than or equal to v cc(b) . table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min max unit v cc(a) supply voltage a ? 0.5 +6.5 v v cc(b) supply voltage b ? 0.5 +6.5 v v i input voltage a port and oe input [1] [2] ? 0.5 +6.5 v b port [1] [2] ? 0.5 +6.5 v v o output voltage active mode [1] [2] a or b port ? 0.5 v cco +0.5 v power-down or 3-state mode [1] a port ? 0.5 +4.6 v b port ? 0.5 +6.5 v i ik input clamping current v i <0v ? 50 - ma i ok output clamping current v o <0v ? 50 - ma i o output current v o =0vtov cco [2] - ? 50 ma i cc supply current i cc(a) or i cc(b) -1 0 0m a i gnd ground current ? 100 - ma t stg storage temperature ? 65 +150 ?c p tot total power dissipation t amb = ? 40 ? c to +125 ? c-2 5 0m w table 6. recommended operating conditions [1] [2] symbol parameter conditions min max unit v cc(a) supply voltage a 1.65 3.6 v v cc(b) supply voltage b 2.3 5.5 v t amb ambient temperature ? 40 +125 ?c ? t/ ? v input transition rise and fall rate a or b port; push-pull driving v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - 10 ns/v oe input v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - 10 ns/v
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 6 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing 11. static characteristics [1] v cco is the supply voltage associated with the output. table 7. typical static characteristics at recommended operating conditions; voltag es are referenced to gnd (ground = 0 v); t amb = 25 ? c. symbol parameter conditions min typ max unit i i input leakage current oe input; v i = 0 v to 3.6 v; v cc(a) =1.65vto3.6v; v cc(b) = 2.3 v to 5.5 v -- ? 1 ? a i oz off-state output current a or b port; v o =0vorv cco ; v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v [1] -- ? 1 ? a i off power-off leakage current a port; v i or v o = 0 v to 3.6 v; v cc(a) =0v;v cc(b) =0vto5.5v -- ? 1 ? a b port; v i or v o = 0 v to 5.5 v; v cc(b) =0v;v cc(a) =0vto3.6v -- ? 1 ? a c i input capacitance oe input; v cc(a) = 3.3 v; v cc(b) =3.3v - 2 - pf c i/o input/output capacitance a port - 4 - pf b port - 7 - pf a or b port; v cc(a) = 3.3 v; v cc(b) =3.3v - 9 - pf table 8. typical supply current at recommended operating conditions; voltag es are referenced to gnd (ground = 0 v); t amb = 25 ? c. v cc(a) v cc(b) unit 2.5 v 3.3 v 5.0 v i cc(a) i cc(b) i cc(a) i cc(b) i cc(a) i cc(b) 1.8 v 0.1 0.5 0.1 1.5 0.1 4.6 ? a 2.5 v 0.1 0.1 0.1 0.8 0.1 3.8 ? a 3.3 v - - 0.1 0.1 0.1 2.8 ? a table 9. static characteristics at recommended operating conditions; volt ages are referenced to gnd (ground = 0 v). symbol parameter conditions ? 40 ? c to +85 ? c ? 40 ? c to +125 ?c unit min max min max v ih high-level input voltage a port v cc(a) = 1.65 v to 1.95 v; v cc(b) = 2.3 v to 5.5 v [1] v cci ? 0.2 - v cci ? 0.2 - v v cc(a) = 2.3 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v [1] v cci ? 0.4 - v cci ? 0.4 - v b port v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v [1] v cci ? 0.4 - v cci ? 0.4 - v oe input v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v 0.65v cc(a) -0.65v cc(a) -v
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 7 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing [1] v cci is the supply voltage associated with the input. [2] v cco is the supply voltage associated with the output. v il low-level input voltage a or b port v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - 0.15 - 0.15 v oe input v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - 0.35v cc(a) -0.35v cc(a) v v oh high-level output voltage a or b port; i o = ? 20 ? a v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v [2] 0.67v cco -0.67v cco -v v ol low-level output voltage a or b port; i o =1 ma [2] v i ? 0.15 v; v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - 0.4 - 0.4 v i i input leakage current oe input; v i = 0 v to 3.6 v; v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - ? 2- ? 12 ? a i oz off-state output current a or b port; v o =0vorv cco ; v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v [2] - ? 2- ? 12 ? a i off power-off leakage current a port; v i or v o = 0 v to 3.6 v; v cc(a) =0v;v cc(b) =0vto5.5v - ? 2- ? 12 ? a b port; v i or v o = 0 v to 3.6 v; v cc(b) =0v;v cc(a) =0vto3.6v - ? 2- ? 12 ? a i cc supply current v i = 0 v or v cci ; i o = 0 a [1] i cc(a) v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v -2.4 - 15 ? a v cc(a) = 3.6 v; v cc(b) = 0 v - 2.2 - 15 ? a v cc(a) = 0 v; v cc(b) =5.5v - ? 1- ? 8 ? a i cc(b) v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v -12 - 30 ? a v cc(a) = 3.6 v; v cc(b) =0v - ? 1- ? 5 ? a v cc(a) = 0 v; v cc(b) =5.5v - 1 - 6 ? a i cc(a) + i cc(b) v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - 14.4 - 45 ? a table 9. static characteristics ?continued at recommended operating conditions; volt ages are referenced to gnd (ground = 0 v). symbol parameter conditions ? 40 ? c to +85 ? c ? 40 ? c to +125 ?c unit min max min max
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 8 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing 12. dynamic characteristics table 10. dynamic characteristics for temperature range ? 40 ? c to +85 ?c [1] voltages are referenced to gnd (ground = 0 v); for test circuit see figure 6 ; for wave forms see figure 4 and figure 5 . symbol parameter conditions v cc(b) unit 2.5 v ? 0.2 v 3.3 v ? 0.3 v 5.0 v ? 0.5 v min max min max min max v cc(a) = 1.8 v ? 0.15 v t phl high to low propagation delay a to b - 4.6 - 4.7 - 5.8 ns t plh low to high propagation delay a to b - 6.8 - 6.8 - 7.0 ns t phl high to low propagation delay b to a - 4.4 - 4.5 - 4.7 ns t plh low to high propagation delay b to a - 5.3 - 4.5 - 0.5 ns t en enable time oe to a; b - 200 - 200 - 200 ns t dis disable time oe to a; no external load [2] -35-35-35ns oe to b; no external load [2] -35-35-35ns oe to a - 230 - 230 - 230 ns oe to b - 200 - 200 - 200 ns t tlh low to high output transition time a port 3.2 9.5 2.3 9.3 1.8 7.6 ns b port 3.3 10.8 2.7 9.1 2.7 7.6 ns t thl high to low output transition time a port 2.0 5.9 1.9 6.0 1.7 13.3 ns b port 2.9 7.6 2.8 7.5 2.8 10.0 ns t sk(o) output skew time between channels [3] - 0.7 - 0.7 - 0.7 ns t w pulse width data inputs 20 - 20 - 20 - ns f data data rate - 50 - 50 - 50 mbps v cc(a) = 2.5 v ? 0.2 v t phl high to low propagation delay a to b - 3.2 - 3.3 - 3.4 ns t plh low to high propagation delay a to b - 3.5 - 4.1 - 4.4 ns t phl high to low propagation delay b to a - 3.0 - 3.6 - 4.3 ns t plh low to high propagation delay b to a - 2.5 - 1.6 - 0.7 ns t en enable time oe to a; b - 200 - 200 - 200 ns t dis disable time oe to a; no external load [2] -35-35-35ns oe to b; no external load [2] -35-35-35ns oe to a - 200 - 200 - 200 ns oe to b - 200 - 200 - 200 ns t tlh low to high output transition time a port 2.8 7.4 2.6 6.6 1.8 6.2 ns b port 3.2 8.3 2.9 7.9 2.4 6.8 ns
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 9 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing [1] t en is the same as t pzl and t pzh . t dis is the same as t plz and t phz . [2] delay between oe going low and when the outputs are disabled. [3] skew between any two outputs of the same package switching in the same direction. t thl high to low output transition time a port 1.9 5.7 1.9 5.5 1.8 5.3 ns b port 2.2 7.8 2.4 6.7 2.6 6.6 ns t sk(o) output skew time between channels [3] - 0.7 - 0.7 - 0.7 ns t w pulse width data inputs 20 - 20 - 20 - ns f data data rate - 50 - 50 - 50 mbps v cc(a) = 3.3 v ? 0.3 v t phl high to low propagation delay a to b - - - 2.4 - 3.1 ns t plh low to high propagation delay a to b - - - 4.2 - 4.4 ns t phl high to low propagation delay b to a - - - 2.5 - 3.3 ns t plh low to high propagation delay b to a - - - 2.5 - 2.6 ns t en enable time oe to a; b - - - 200 - 200 ns t dis disable time oe to a; no external load [2] ---35-35ns oe to b; no external load [2] ---35-35ns oe to a - - - 260 - 260 ns oe to b - - - 200 - 200 ns t tlh low to high output transition time a port - - 2.3 5.6 1.9 5.9 ns b port - - 2.5 6.4 2.1 7.4 ns t thl high to low output transition time a port - - 2.0 5.4 1.9 5.0 ns b port - - 2.3 7.4 2.4 7.6 ns t sk(o) output skew time between channels [3] ---0.7-0.7ns t w pulse width data inputs - - 20 - 20 - ns f data data rate - - - 50 - 50 mbps table 10. dynamic characteristics for temperature range ? 40 ? c to +85 ?c [1] voltages are referenced to gnd (ground = 0 v); for test circuit see figure 6 ; for wave forms see figure 4 and figure 5 . symbol parameter conditions v cc(b) unit 2.5 v ? 0.2 v 3.3 v ? 0.3 v 5.0 v ? 0.5 v min max min max min max
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 10 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing table 11. dynamic characteristics for temperature range ? 40 ? c to +125 ?c [1] voltages are referenced to gnd (ground = 0 v); for test circuit see figure 6 ; for wave forms see figure 4 and figure 5 . symbol parameter conditions v cc(b) unit 2.5 v ? 0.2 v 3.3 v ? 0.3 v 5.0 v ? 0.5 v min max min max min max v cc(a) = 1.8 v ? 0.15 v t phl high to low propagation delay a to b - 5.8 - 5.9 - 7.3 ns t plh low to high propagation delay a to b - 8.5 - 8.5 - 8.8 ns t phl high to low propagation delay b to a - 5.5 - 5.7 - 5.9 ns t plh low to high propagation delay b to a - 6.7 - 5.7 - 0.7 ns t en enable time oe to a; b - 200 - 200 - 200 ns t dis disable time oe to a; no external load [2] -45-45-45ns oe to b; no external load [2] -45-45-45ns oe to a - 250 - 250 - 250 ns oe to b - 220 - 220 - 220 ns t tlh low to high output transition time a port 3.2 11.9 2.3 11.7 1.8 9.5 ns b port 3.3 13.5 2.7 11.4 2.7 9.5 ns t thl high to low output transition time a port 2.0 7.4 1.9 7.5 1.7 16.7 ns b port 2.9 9.5 2.8 9.4 2.8 12.5 ns t sk(o) output skew time between channels [3] - 0.8 - 0.8 - 0.8 ns t w pulse width data inputs 20 - 20 - 20 - ns f data data rate - 50 - 50 - 50 mbps v cc(a) = 2.5 v ? 0.2 v t phl high to low propagation delay a to b - 4.0 - 4.2 - 4.3 ns t plh low to high propagation delay a to b - 4.4 - 5.2 - 5.5 ns t phl high to low propagation delay b to a - 3.8 - 4.5 - 5.4 ns t plh low to high propagation delay b to a - 3.2 - 2.0 - 0.9 ns t en enable time oe to a; b - 200 - 200 - 200 ns t dis disable time oe to a; no external load [2] -45-45-45ns oe to b; no external load [2] -45-45-45ns oe to a - 220 - 220 - 220 ns oe to b - 220 - 220 - 220 ns t tlh low to high output transition time a port 2.8 9.3 2.6 8.3 1.8 7.8 ns b port 3.2 10.4 2.9 9.7 2.4 8.3 ns
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 11 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing [1] t en is the same as t pzl and t pzh . t dis is the same as t plz and t phz . [2] delay between oe going low and when the outputs are disabled. [3] skew between any two outputs of the same package switching in the same direction. t thl high to low output transition time a port 1.9 7.2 1.9 6.9 1.8 6.7 ns b port 2.2 9.8 2.4 8.4 2.6 8.3 ns t sk(o) output skew time between channels [3] - 0.8 - 0.8 - 0.8 ns t w pulse width data inputs 20 - 20 - 20 - ns f data data rate - 50 - 50 - 50 mbps v cc(a) = 3.3 v ? 0.3 v t phl high to low propagation delay a to b - - - 3.0 - 3.9 ns t plh low to high propagation delay a to b - - - 5.3 - 5.5 ns t phl high to low propagation delay b to a - - - 3.2 - 4.2 ns t plh low to high propagation delay b to a - - - 3.2 - 3.3 ns t en enable time oe to a; b - - - 200 - 200 ns t dis disable time oe to a; no external load [2] - - - 45 - 45 ns oe to b; no external load [2] - - - 45 - 45 ns oe to a - - - 280 - 280 ns oe to b - - - 220 - 220 ns t tlh low to high output transition time a port - - 2.3 7.0 1.9 7.4 ns b port - - 2.5 8.0 2.1 9.3 ns t thl high to low output transition time a port - - 2.0 6.8 1.9 6.3 ns b port - - 2.3 9.3 2.4 9.5 ns t sk(o) output skew time between channels [3] - - - 0.8 - 0.8 ns t w pulse width data inputs - - 20 - 20 - ns f data data rate - - - 50 - 50 mbps table 11. dynamic characteristics for temperature range ? 40 ? c to +125 ?c [1] ?continued voltages are referenced to gnd (ground = 0 v); for test circuit see figure 6 ; for wave forms see figure 4 and figure 5 . symbol parameter conditions v cc(b) unit 2.5 v ? 0.2 v 3.3 v ? 0.3 v 5.0 v ? 0.5 v min max min max min max
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 12 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing 13. waveforms [1] v cci is the supply voltage associated with the input. [2] v cco is the supply voltage associated with the output. measurement points are given in table 12 . v ol and v oh are typical output voltage levels that occur with the output load. fig 4. the data input (an, bn) to data output (bn, an) propagation delay times 001aal918 t plh t phl v m v m bn, an output an, bn input v i gnd v oh v ol t thl t tlh 90 % 10 % measurement points are given in table 12 . v ol and v oh are typical output voltage levels that occur with the output load. fig 5. enable and disable times 001aal919 t plz t phz outputs disabled outputs enabled outputs enabled output low-to-off off-to-low output high-to-off off-to-high oe input v oh v cco gnd v ol gnd v i t pzl t pzh v y v m v m v x v m table 12. measurement points [1] [2] supply voltage input output v cco v m v m v x v y 1.8 v ? 0.15 v 0.5v cci 0.5v cco v ol + 0.15 v v oh ? 0.15 v 2.5 v ? 0.2 v 0.5v cci 0.5v cco v ol + 0.15 v v oh ? 0.15 v 3.3 v ? 0.3 v 0.5v cci 0.5v cco v ol + 0.3 v v oh ? 0.3 v 5.0 v ? 0.5 v 0.5v cci 0.5v cco v ol + 0.3 v v oh ? 0.3 v
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 13 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing [1] v cci is the supply voltage associated with the input. [2] for measuring data rate, pulse width, propagat ion delay and output rise and fall measurements, r l = 1 m ? . for measuring enable and disable times, r l = 50 k ? . [3] v cco is the supply voltage associated with the output. test data is given in table 13 . all input pulses are supplied by generators having the following characteristics: prr ? 10 mhz; z o = 50 ? ; dv/dt ? 1.0 v/ns. r l = load resistance. c l = load capacitance including jig and probe capacitance. v ext = external voltage for measuring switching times. fig 6. test circuit for measuring switching times v m v m t w t w 10 % 90 % 0 v v i v i negative pulse positive pulse 0 v v m v m 90 % 10 % t f t r t r t f 001aal920 v ext v cc v i v o dut c l r l r l g table 13. test data supply voltage input load v ext v cc(a) v cc(b) v i [1] ? t/ ? v c l r l [2] t plh , t phl t pzh , t phz t pzl , t plz [3] 1.65 v to 3.6 v 2.3 v to 5.5 v v cci ? 1.0ns/v 15pf 50k ? , 1 m ? open open 2v cco
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 14 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing 14. application information 14.1 applications voltage level-translation applications. the nt s0104-q100 can be used in point-to-point applications to interface be tween devices or systems oper ating at different supply voltages. the device is primarily targeted at i 2 c or 1-wire which use open-drain drivers. although it may also be used in applications where push-pull drivers are connected to the ports, the ntb0104-q100 may be more suitable. 14.2 architecture the architecture of the nts0104-q100 is shown in figure 8 . the device does not require an extra input signal to control the direction of data flow from a to b or b to a. the nts0104-q100 is a "switch" type voltage translator, it employs two key circuits to enable voltage translation: 1. a pass-gate transistor (n-channel) that ties the ports together. 2. an output edge-rate accelerator that detects and accelerates rising edges on the i/o pins. fig 7. typical operating circuit aaa-003591 0.1 f 0.1 f 1 f v cc(a) v cc(b) 1.8 v system controller 3.3 v system gnd oe a1 data 3.3 v 1.8 v b1 a2 b2 a3 b3 a4 b4 data nts0104-q100 fig 8. architecture of nts0104-q 100 i/o cell (one channel) 001aal965 v cc(a) v cc(b) ab 10 k
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 15 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing the gate bias voltage of the pass gate tran sistor (t3) is set at approximately one threshold voltage above the v cc level of the low-voltage side. during a low-to-high transition, the output one-shot accelerates t he output transition. th is acceleration is achieved by switching on the pmos transistors (t1, t2) bypassing the 10 k ? pull-up resistors and increasing current drive capability. the one-shot is activated once the input transition reaches approximately v cci /2; it is de-activated appro ximately 50 ns after the output reaches v cco /2. during the acceleration time, the driver output resistance is between approximately 50 ? and 70 ? . to avoid signal contention and minimize dynamic i cc , wait for the one-shot circuit to turn-off before applying a signal in the opposite direction. pull-up resi stors are included in the device fo r dc current sourcing capability. 14.3 input driver requirements as the nts0104-q100 is a switch type translat or, properties of the input driver directly affect the output signal. the external open-drain or push-pull driver applied to an i/o, determines the static curren t sinking capability of the syst em. the maximum data rate, high-to-low output transition time (t thl ) and propagation delay (t phl ), are dependent upon the output impedance and edge-rate of the external driver. the limits provided for these parameters in the data sheet assume a driver with output impedance below 50 ? is used. 14.4 output load considerations the maximum lumped capacitive load that can be driven is dependant upon the one-shot pulse duration. in cases with ve ry heavy capacitive loading, there is a risk that the output will not reach the positive rail wi thin the one-sho t pulse duration. to avoid excessive capacitive loading and to ensure correct triggering of the one-shot, use short trace lengths and low capacitance connectors on nts0104-q100 pcb layouts. to ensure low impedance term ination and avoid output signa l oscillations and one-shot retriggering, control the length of the pcb tr ace. the pcb trace must limit the round-trip delay of any reflection to within the one- shot pulse duration (approximately 50 ns). 14.5 power-up during operation v cc(a) must never be higher than v cc(b) . however, during power-up v cc(a) ? v cc(b) does not damage the device. this means that either power supply can be ramped up first. there is no special power-up sequencing required. the nts0104-q100 includes circuitry that disables all output ports when either v cc(a) or v cc(b) is switched off. 14.6 enable and disable an output enable input (oe) is used to dis able the device. setting oe = low causes all i/os to assume the high-impedance off-state. the disable time (t dis with no external load) indicates the delay between when oe goes low and when outputs actually become disabled. the enable time (t en ) indicates the amount of time required for one one-shot circuit to become operational after oe is taken high. to ensure the high-impedance off-state during power-up or power-down, tie pin oe to gnd through a pull-down resistor. the current-sourcing capab ility of the driver determines the minimum value of the resistor.
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 16 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing 14.7 pull-up or pull-down resistors on i/os lines each a port i/o has an internal 10 k ? pull-up resistor to v cc(a) . each b port i/o has an internal 10 k ? pull-up resistor to v cc(b) . if a smaller value of pull- up resistor is required, add an external resistor in parallel to the internal 10 k ? . the smaller value, affects the v ol level. when oe goes low, the internal pull-ups of the nts0104-q100 are disabled.
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 17 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing 15. package outline fig 9. package outline wlcsp12 package references outline version european projection issue date iec jedec jeita nts0104-q100uk nts0104-q100uk_po 11-07-05 12-05-21 unit mm max nom min 0.615 0.560 0.505 0.23 1.23 1.63 0.05 0.015 a dimensions wlcsp12: wafer level chip-size package, 12 bumps; body 1.20 x 1.60 x 0.56 mm. (backside coating included) nts0104-q100uk a 1 b 0.29 0.20 1.20 1.60 0.40 0.80 0.26 deee 1 e 2 1.20 vwy 0.03 0.17 0.385 a 2 0.360 0.335 1.17 1.57 0.23 0 20 mm scale detail x ball a1 index area b d a e a a 2 a 1 x b e 1 e ac b ? v c ? w e 2 e 1/2 e ball a1 index area 123 d c b a c y
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 18 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing 16. abbreviations 17. revision history table 14. abbreviations acronym description cdm charged device model cmos complementary metal oxide semiconductor dut device under test esd electrostatic discharge gpio general purpose input output hbm human body model i 2 c inter-integrated circuit mm machine model smbus system management bus uart universal asynchronous receiver transmitter table 15. revision history document id release date data sheet status change notice supersedes nts0104_q100 v.1 20120807 product data sheet - -
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 19 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing 18. legal information 18.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 18.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 18.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use in automotive applications ? this nxp semiconductors product has been qualified for use in automotive applications. unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
nts0104_q100 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 7 august 2012 20 of 21 nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any licens e under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 18.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 19. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors nts0104-q100 dual supply translating transceiver; op en drain; auto direction sensing ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 7 august 2012 document identifier: nts0104_q100 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 20. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 7 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 7.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 functional description . . . . . . . . . . . . . . . . . . . 4 9 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 recommended operating conditions. . . . . . . . 5 11 static characteristics. . . . . . . . . . . . . . . . . . . . . 6 12 dynamic characteristics . . . . . . . . . . . . . . . . . . 8 13 waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14 application information. . . . . . . . . . . . . . . . . . 14 14.1 applications . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14.2 architecture . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14.3 input driver requirements . . . . . . . . . . . . . . . . 15 14.4 output load considerations . . . . . . . . . . . . . . . 15 14.5 power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 14.6 enable and disable . . . . . . . . . . . . . . . . . . . . . 15 14.7 pull-up or pull-down resistors on i/os lines . . 16 15 package outline . . . . . . . . . . . . . . . . . . . . . . . . 17 16 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 18 17 revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 18 legal information. . . . . . . . . . . . . . . . . . . . . . . 19 18.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 19 18.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 18.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 18.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20 19 contact information. . . . . . . . . . . . . . . . . . . . . 20 20 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

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